| PART |
Description |
Maker |
| MT88E41 MT88E41AE MT88E41AS MT88E41AN |
CMOS Extended Voltage Calling Number Identification Circuit (ECNIC)
|
ZARLINK[Zarlink Semiconductor Inc]
|
| MT88E46 MT88E46AS |
Bellcore Compliant Calling Number Identification Circuit TELEPHONE CALLING NO IDENT CKT, PDSO20
Dual inputs (tip/ring and 4 wire) Bellcore compliant Extended Voltage Calling Number Identification Circuit for CID, CIDCW and CWD (Type 2 and 2.5)
|
Zarlink Semiconductor, Inc.
Zarlink Semiconductor Inc.
|
| MT88E43B |
Extended Voltage Calling Number Identification Circuit (ECNIC)(扩展电压主叫识别电路（接收传送的物理层信号）)
|
Mitel Networks Corporation
|
| MT88E43B |
Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| MT8841 MT8841AE MT8841AN MT8841AS |
CMOS Calling Number Identification Circuit
|
Mitel Networks Corporat...
MITEL[Mitel Networks Corporation]
|
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 |
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
etc
|
| K4E170411D K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
|
Bourns, Inc.
Samsung Semiconductor Co., Ltd.
|
| K4E661611D-TC60 K4E641611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
